excelics EPA120A/EPA120Av data sheet high efficiency heterojunction power fet +29.5dbm typical output powe r 9.5db typical power gain for EPA120A and 10.5db for EPA120Av at 18ghz 0.3 x 1200 micron recessed ?mushroom? gate si 3 n 4 passivation advanced epitaxial doping profile provides high power efficiency, lineari ty and reliability EPA120Av with via hole source grounding idss sorted in 30ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/ test conditions EPA120A EPA120Av unit min typ max min typ max output power at 1db compression f=12ghz 29.5 29.5 p 1db vds=8v, ids=50% idss f=18ghz 28.0 29.5 28.0 29.5 dbm gain at 1db compression f=12ghz 10.0 12.0 10.5 12.5 g 1db vds=8v, ids=50% idss f=18ghz 9.5 10.5 db gain at 1db compression pae vds=8v, ids=50% idss f=12ghz 45 46 % idss saturated drain current vds=3v, vgs=0v 220 360 500 220 360 500 ma gm transconductance vds=3v, vgs=0v 240 380 240 380 ms vp pinch - off voltage vds=3v, ids=3.5ma - 1.0 - 2.5 - 1.0 - 2.5 v bvgd drain breakdown voltage igd=1 .2ma - 11 - 15 - 11 - 15 v bvgs source breakdown voltage igs=1.2ma - 7 - 14 - 7 - 14 v rth thermal resistance (au - sn eutectic attach) 37 27 o c/w maximum ratings at 25 o c symbols parameters EPA120A EPA120Av absolute 1 continuous 2 absolute 1 conti nuous 2 vds drain - source voltage 12v 8v 12v 8v vgs gate - source voltage - 8v - 3v - 8v - 3v ids drain current idss 385ma idss idss igsf forward gate current 60ma 10ma 60ma 10ma pin input power 27dbm @ 3db compression 27dbm @ 3db compression tch channel tem perature 175 o c 150 o c 175 o c 150 o c tstg storage temperature - 65/175 o c - 65/150 o c - 65/175 o c - 65/150 o c pt total power dissipation 3.7w 3.1w 5.0w 4.2w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of th e above ratings may reduce mttf below design goals. excelics semiconductor, inc., 2908 scott blvd., santa clara, ca 95054 phone: (408) 970 - 8664 fax: (408) 970 - 8998 web site: www.excelics.com chip thickness: 75 20 microns all dimensions in microns : via hole no via hole for EPA120A
EPA120A/EPA120Av d ata sheet high efficiency heterojunction power fet EPA120A s - parameters EPA120A 8v, 1/2 idss freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang (ghz) mag ang mag ang mag ang mag ang 1.0 0.902 - 95.7 15.160 125.3 0.030 41.8 0.305 - 68.3 21.0 0.898 157.5 0.776 - 8.5 0.041 21.0 0.674 - 170.7 2.0 0.891 - 131.8 9.261 103.2 0.0 36 25.7 0.252 - 96.8 22.0 0.899 157.6 0.727 - 12.2 0.042 22.3 0.691 - 174.7 4.0 0.879 - 157.0 4.926 81.5 0.038 14.7 0.254 - 116.2 24.0 0.897 151.5 0.634 - 20.6 0.045 23.3 0.721 - 179.0 6.0 0.882 - 166.8 3.290 67.5 0.037 11.8 0.290 - 126.9 26.0 0.909 148.8 0.557 - 29.2 0.051 24.6 0.741 172.1 8.0 0.882 - 176.2 2.498 54.3 0.036 12.3 0.351 - 132.3 28.0 0.918 151.8 0.484 - 36.6 0.056 23.4 0.756 158.7 10.0 0.883 175.0 1.984 42.0 0.035 12.1 0.424 - 138.9 30.0 0.915 148.1 0.424 - 44.0 0.059 21.5 0.787 152.2 12.0 0.892 171.6 1.603 31.3 0.034 13.6 0.479 - 147.5 32.0 0.913 143.6 0.365 - 51.2 0.060 17.6 0.807 148.1 14.0 0.900 168.9 1.302 21.7 0.033 16.2 0.534 - 154.8 34.0 0.911 140.5 0.318 - 56.9 0.058 18.3 0.822 146.3 16.0 0.906 166.1 1.075 12.8 0.033 18.1 0.590 - 159.7 36.0 0.918 136.7 0.287 - 60.3 0.063 18.2 0.841 145.6 18.0 0.907 161.8 0.903 4.7 0.034 20.3 0.629 - 161.4 38.0 0.929 135.7 0.270 - 64.3 0.069 9.9 0.842 142.7 20.0 0.900 159.5 0.806 - 4.3 0.038 20.1 0.668 - 168.0 40.0 0.899 134.0 0.254 - 70.4 0.070 - 1.9 0.843 138.4 epa12 0av 8v, 1/2 idss freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang (ghz) mag ang mag ang mag ang mag ang 1.0 0.921 - 97.5 14.598 125.1 0.028 40.3 0 .279 - 75.6 21.0 0.947 155.6 0.730 - 11.5 0.030 2.4 0.716 - 174.0 2.0 0.905 - 134.6 8.894 102.7 0.035 23.0 0.263 - 104.4 22.0 0.945 154.3 0.675 - 15.4 0.030 1.1 0.738 - 176.1 4.0 0.901 - 160.6 4.739 81.1 0.035 10.5 0.284 - 120.1 24.0 0.942 149.6 0.576 - 23.2 0.030 4.1 0.785 - 179.7 6.0 0.906 - 175.2 3.186 66.3 0.035 6.3 0.334 - 124.0 26.0 0.939 147.1 0.492 - 31.5 0.030 7.2 0.817 172.9 8.0 0.912 - 179.0 2.421 54.2 0.033 4.2 0.364 - 133.1 28.0 0.916 139.4 0.425 - 40.2 0.032 6.7 0.858 169.6 10.0 0.915 178.0 1.919 42.5 0.0 31 0.3 0.413 - 144.1 30.0 0.905 131.1 0.370 - 49.5 0.033 3.2 0.878 166.2 12.0 0.925 169.8 1.536 30.3 0.029 0.1 0.484 - 149.4 32.0 0.871 128.7 0.325 - 58.7 0.031 - 5.4 0.924 157.1 14.0 0.933 165.1 1.244 19.7 0.027 - 2.0 0.553 - 156.5 34.0 0.928 128.0 0.284 - 66.9 0.027 - 7.7 0.878 149.3 16.0 0.943 160.9 1.019 9.9 0.026 2.3 0.618 - 161.3 36.0 0.976 129.5 0.263 - 72.8 0.028 - 5.3 0.898 142.6 18.0 0.946 161.7 0.862 1.8 0.027 1.0 0.666 - 169.4 38.0 1.002 131.8 0.252 - 77.5 0.038 - 24.8 0.937 136.5 20.0 0.947 158.2 0.749 - 6.3 0.027 0.5 0.712 - 172.2 40.0 1.001 131.2 0.240 - 83.0 0.047 - 52.6 0.944 135.4 note: the data included 0.7 mils diameter au bonding wires; 3 gate wires, 15 mils each; 3 drain wires, 20 mils each; 8 source wires, 7 mils each; no source wires fo r EPA120Av. p-1db & pae vs. vds 20 25 30 35 40 4 5 6 7 8 drain-source voltage (v) p-1db (dbm) 10 20 30 40 50 pae (%) f = 12 ghz ids = 50% idss pout & pae vs. pin -10 0 10 20 30 40 50 -5 0 5 10 15 20 pin (dbm) pout (dbm) or pae (%) f = 12 ghz vds = 8v, ids = 50% idss pae pout
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